Al1-XGaxAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms

B. C. De Cooman; C. B. Carter; J. R. Ralston

doi:10.1117/12.941041

22 April 1987 Al_1-XGa_xAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms

B. C. De Cooman, C. B. Carter, J. R. Ralston

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941041
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The disordering of All-xGaxAs/GaAs superlattices by ion-implantation has been studied by cross-sectional electron microscopy. It has been found that the superlattice intermixing is extensive only when accompanied by superlattice amorphization or impurity diffusion. Stacking-fault tetrahedra, interstitial dislocation loops and microtwins are the main types of defects observed after implantation and annealing. The defects are stratified and interact with the periodic strain-field of the superlattice.

Citation Download Citation

B. C. De Cooman, C. B. Carter, and J. R. Ralston "Al_1-XGa_xAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941041

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