Paper
22 April 1987 Optical Absorption In Low P-Type Hg0.8Cd0.2Te Alloys
Changhe Huang, Zhenzhong Yu, Dingyuan Tang
Author Affiliations +
Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941039
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Unctoped Hga8Cd0,2Te alloys were annealed near the P-N conversion temperature region. Samples with various hole concentration were obtained. Optical absorption and Hall meas-urement were taken in the temperature range 77-300K. The measured wavelength ranged from the absorption edge to 30 dam. The temperature dependence of the absorption for low P-type alloys was observed. As the temperature decreases down from room temperature, the absorption decreases at first, and then increases. The intervalence cross section has been calculated with a band structure parameter P of 8x10 eV-cm and a heavy hole mass of 0.55m. Hole concentration for these alloys has been estimated by the absorption coefficient at 77K. The hole concentration as the function of annealing condition can be explained by the model of the mercury vacancy. The influence of the annealing condition on the sharpness of the absorption edge was observed. The absorption edge for high purity samples is steeper than those annealed at 350 degrees C.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changhe Huang, Zhenzhong Yu, and Dingyuan Tang "Optical Absorption In Low P-Type Hg0.8Cd0.2Te Alloys", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941039
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KEYWORDS
Absorption

Annealing

Mercury

Magnetism

Semiconductors

Temperature metrology

Optical testing

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