Paper
10 March 1988 Integrated Optical Circuits Using Doping Superlattices
G. Hasnain, C. Chang-Hasnain, A. Dienes, J. R. Whinnery, G. H. Dohler
Author Affiliations +
Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988) https://doi.org/10.1117/12.942320
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
A monolithic integrated optical circuit consisting of an LED (light emitting diode), a modulator and a detector on a GaAs substrate is demonstrated. The voltage tunable effective bandgap of doping superlattices is utilized to integrate several physically identical devices which perform different functions depending on their individual bias voltage. The detector responds linearly to the emitter intensity. Linear amplitude modulation is observed with change of modulator bias over an appreciable range.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Hasnain, C. Chang-Hasnain, A. Dienes, J. R. Whinnery, and G. H. Dohler "Integrated Optical Circuits Using Doping Superlattices", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); https://doi.org/10.1117/12.942320
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Modulators

Superlattices

Light emitting diodes

Photonic integrated circuits

Doping

Gallium arsenide

Back to Top