Laser Diode Requirements And Limitations For VLSI Holographic Optical Interconnects

Eric Bradley; Paul Kit Lai Yu

doi:10.1117/12.942369

10 March 1988 Laser Diode Requirements And Limitations For VLSI Holographic Optical Interconnects

Eric Bradley, Paul Kit Lai Yu

Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988) https://doi.org/10.1117/12.942369
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Laser requirements and limitations for VLSI optical interconnect networks employing CGHs are discussed from a system point of view. For architectures with a collimating lens at the laser and a collector lens at the (on-chip) detector, the restrictions on laser wavelength stability are typically ± 10 A (thus requiring the laser's temperature to be regulated to approximately ± 5 - 10°C). Dif-fraction limitations are shown to restrict the density of interconnects to the 104 /cm2 range for many architectures (in particular, "space variant" architectures), rather than the 107 /cm2 to 108 /cm2 range frequently quoted for "space invariant" architectures. Archi-tectures with a mixture of space variance and invariance can lead to intermediate densities. Some architectures require low threshold, high efficiency lasers, whereas others require very high output power with much less concern for threshold and efficiency. A network with 3000 point-to-point interconnects/cm2, each transmitting at a 500 Mbit rate with a 10-11 Bit-Error-Rate is analyzed and the best system performance is obtained if very high power laser arrays (5 - 10 W) are available. Laser output pattern control is also con-sidered.

Citation Download Citation

Eric Bradley and Paul Kit Lai Yu "Laser Diode Requirements And Limitations For VLSI Holographic Optical Interconnects", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); https://doi.org/10.1117/12.942369

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