The Effect Of Pressure To 4 GPa On The Photoluminescence Spectrum Of A Multiple Quantum Well P-I-N Diode

Andrew D. Prins; John D. Lambkin; David J. Dunstan; Ian L. Spain

doi:10.1117/12.942334

10 March 1988 The Effect Of Pressure To 4 GPa On The Photoluminescence Spectrum Of A Multiple Quantum Well P-I-N Diode

Andrew D. Prins, John D. Lambkin, David J. Dunstan, Ian L. Spain

Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988) https://doi.org/10.1117/12.942334
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

The photoluminescence spectrum of a GaAs/GaAlAs multiple quantum well p-i-n diode has been measured as a function of pressure. Room temperature measurements were carried out in a diamond anvil cell to about 4 GPa (40 kbars), and at 77 K to about 0.8 GPa in a conventional high pressure apparatus. Shifts in photoluminescence peaks originating from the GaAlAs capping layer and two regions of the multiple quantum well layers of different thicknesses are discussed in terms of a model for the pressure shifts in the r and X-states of these components. A brief discussion of the emission intensities is also given.

Citation Download Citation

Andrew D. Prins, John D. Lambkin, David J. Dunstan, and Ian L. Spain "The Effect Of Pressure To 4 GPa On The Photoluminescence Spectrum Of A Multiple Quantum Well P-I-N Diode", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); https://doi.org/10.1117/12.942334

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