Paper
1 January 1987 Surface Emission And Band-Bending In Shallow Junction GaAs LEDs As Affected By Type Of Gas And Pressure
S. Hava
Author Affiliations +
Proceedings Volume 0842, Fiber Optics Reliability: Benign and Adverse Environments; (1987) https://doi.org/10.1117/12.968177
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
The environment can affect optical and electronic properties of optoelectronic devices. Here, noticeable alterations in spectral shape and wavelength of peak emission in light emitting diodes are shown to occur with changes in environmental gas and pressure. A relationship between band bending and surface charge density is derived.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Hava "Surface Emission And Band-Bending In Shallow Junction GaAs LEDs As Affected By Type Of Gas And Pressure", Proc. SPIE 0842, Fiber Optics Reliability: Benign and Adverse Environments, (1 January 1987); https://doi.org/10.1117/12.968177
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KEYWORDS
Light emitting diodes

Gallium arsenide

Chemical species

Nitrogen

Molecules

Optoelectronic devices

Sensors

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