A New Silicone-Based Positive Photoresist (SPP) For A Two-Layer Resist System

Saburo Imamura; Akinobu Tanaka; Katsuhide Onose

doi:10.1117/12.968330

1 January 1988 A New Silicone-Based Positive Photoresist (SPP) For A Two-Layer Resist System

Saburo Imamura, Akinobu Tanaka, Katsuhide Onose

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968330
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

A new silicone-based positive photoresist(SPP), composed of an alkali-soluble silicone polymer with diazonaphthoquinone, is developed. The sensitivity of SPP to near-uv light is almost the same as that of conventional photoresist(OFPR). SPP shows high dry-etching durability to 02 RIE. The etching rate ratio of SPP to OFPR is over 20. This high dry-etching durability allows the fabrication of thick OFPR resist patterns using an SPP pattern mask. A 0.6 μm line and space is clearly resolved in an SPP/OFPR resist system when exposed to a GCA stepper (NA=0.38)

Citation Download Citation

Saburo Imamura, Akinobu Tanaka, and Katsuhide Onose "A New Silicone-Based Positive Photoresist (SPP) For A Two-Layer Resist System", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968330

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