A Novel Silicon-Containing Resist For A Bi-Layer Resist System

Tsutomu Noguchi; Keiichi Nito; Jun'etsu Seto; Izumi Hata; Hiroshi Sato; Toshirou Tsumori

doi:10.1117/12.968316

1 January 1988 A Novel Silicon-Containing Resist For A Bi-Layer Resist System

Tsutomu Noguchi, Keiichi Nito, Jun'etsu Seto, Izumi Hata, Hiroshi Sato, Toshirou Tsumori

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968316
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

A new positive working photoresist which is applicable to the bi-layer resist system using a current g-line stepper has been developed. This resist consists of a naphthoquinone diazide photoactive compound and a silicon containing novolak resin, which is synthesised from phenols with siloxane groups(-Si-O-), and formaldehyde by condensation reaction. The Si-containing resist has a resolution capability of 0.5μm L/S with a g-line sensitivity about 250 mJ/cm2, and a high resistance to oxygen plasma, with an etching rate ratio of 61:1(photoresist/Si resist). 0.5μm L/S pattern was precisely transferred to the bottom layer by 02 RIE with vertical side walls.

Citation Download Citation

Tsutomu Noguchi, Keiichi Nito, Jun'etsu Seto, Izumi Hata, Hiroshi Sato, and Toshirou Tsumori "A Novel Silicon-Containing Resist For A Bi-Layer Resist System", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968316

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