A Precise Metrology Tool For Stepper Characterization And Monitor In The One Micron Or Sub-Micron Lithographic Environments

Shaunee Cheng; Michael A Lutz

doi:10.1117/12.968378

1 January 1988 A Precise Metrology Tool For Stepper Characterization And Monitor In The One Micron Or Sub-Micron Lithographic Environments

Shaunee Cheng, Michael A Lutz

Author Affiliations +

Proceedings Volume 0921, Integrated Circuit Metrology, Inspection, and Process Control II; (1988) https://doi.org/10.1117/12.968378
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

What capability am I buying with a new stepper purchase? Do I know if the stepper is optimally setup? How is the stepper performance sustained over time? A lithographer is constantly struggling to find answers to these questions. All of the existing metrology tools for stepper characterization are dependent on the resist process, and sometimes further process steps . Measured results are really the combined effects of all the process steps involved and this can change over time, making interpretation of stepper characteristics confusing and often difficult. The Stepper Image Monitor(SIM), a tool that measures stepper performance in real time, completely independent of the resist process, provides the lithography engineer with a fast, precise measurement technique for stepper performance evaluation in three lithography environments: 1. Development 2. Pilot line 3. Production The presentation will include a discussion of how the Stepper Image Monitor(SIM) is used in each one of these lithography environments. For lithography development, stepper parameters such as contrast across the lens field, field curvature, and useable depth of focus(DOF) are measured and examples of measured results are presented. The precision in determining best focus using the SIM provides practical applications for routine focus monitor in the pilot line and in the production environment.

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Shaunee Cheng and Michael A Lutz "A Precise Metrology Tool For Stepper Characterization And Monitor In The One Micron Or Sub-Micron Lithographic Environments", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968378

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KEYWORDS

Lithography

Image processing

Environmental monitoring

Photoresist processing

Metrology

Reticles

Image quality

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