Paper
1 January 1988 Electrical Measurement Of Submicrometer Contact Holes
B. J. Lin, J. A. Underhill, D. Sundling, B. Peck
Author Affiliations +
Abstract
A special technique to electrically measure submicrometer isolated features is described. By incorporating a large number of features in a single test structure, a gain in precision better than 3 nm can be achieved. The interpreted contact hole diameter as well as the area of the isolated features were found to be very accurate. The special test pattern, an analytic expression for interpretation of the results, and hole size data from a variety of exposure dosages are included.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. J. Lin, J. A. Underhill, D. Sundling, and B. Peck "Electrical Measurement Of Submicrometer Contact Holes", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968364
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Cited by 1 scholarly publication.
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KEYWORDS
Resistance

Inspection

Integrated circuits

Metrology

Process control

Solids

Etching

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