The Use Of A Non-Actinic Dye In A Conventional Positive Photoresist For Improved Target Alignment In The Dark Field Mode

David A. Sawoska; Keith D. SanGiacomo; Elaine C. Jacov ich; William F. Cordes III

doi:10.1117/12.968416

1 January 1988 The Use Of A Non-Actinic Dye In A Conventional Positive Photoresist For Improved Target Alignment In The Dark Field Mode

David A. Sawoska, Keith D. SanGiacomo, Elaine C. Jacov ich, William F. Cordes III

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Proceedings Volume 0922, Optical/Laser Microlithography; (1988) https://doi.org/10.1117/12.968416
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

The need for photolithographic equipment to automatically align with improved accuracy is imperative, particularly considering the submicron design rules of megabit devices. By the addition of a non-actinic dye to a conventional positive photoresist (EZ-dye to EPA914, for example) and the utilization of a 1:1 Ultratech stepper, an improvement in alignment signal quality and the process window for optimized alignment operation on non-optimized targets is reported. The results obtained with the same resist without the dye are used as a baseline to further characterize the influence of the dye on target recognition and yield in actual production. The technique/mechanism of the dye interaction with the dark field technology utilized by the Ultratech stepper is described in detail. For example, it can be shown that with the incorporation of a dye that absorbs light at a given wavelength (for the Ultratech stepper this is found to be about 550 nm), the detection signal is optimized and the characteristic alignment peak is more easily recognized because of its increased sharpness and intensity. It follows from these observations that level-to-level alignment is improved.

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David A. Sawoska, Keith D. SanGiacomo, Elaine C. Jacov ich, and William F. Cordes III "The Use Of A Non-Actinic Dye In A Conventional Positive Photoresist For Improved Target Alignment In The Dark Field Mode", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968416

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