Paper
14 June 1988 Microlithography Using A Laser Plasma Created X-Ray Source
M Chaker, B Lafontaine, J C Kieffer, P P Mercier, H Pepin, J Bernard, D Villeneuve, H Baldis, J F Currie, I Toubhans
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Abstract
Laser produced plasmas are investigated both theoretically and experimentally with respect to their suitability as X-ray lithography sources. We find that a minimum of 100 W average laser power is required for an acceptable wafer throughput (36 6 in. wafer/h). In addition, the optimization of the X-ray conversion efficiency in the keV range (0.75-2 keV) necessitates a laser intensity greater than 1 x 1013 W cm-2 and a judicious choice of target atomic number. We also describe a simulation program called XLIMLAS which can be used, for instance, to determine the laser conditions which maximize the energy deposited in the resist by matching the X-ray spectrum to the wavelength dependent mask substrate transmission and to the resist absorption. Moreover, this optimisation must ensure a high quality of the resist line edge profiles. Finally, we present some experimental results on sensitivity and patternability of FBM120 resist.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M Chaker, B Lafontaine, J C Kieffer, P P Mercier, H Pepin, J Bernard, D Villeneuve, H Baldis, J F Currie, and I Toubhans "Microlithography Using A Laser Plasma Created X-Ray Source", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945629
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
X-rays

Plasma

Photomasks

Lithography

X-ray lithography

Pulsed laser operation

Etching

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