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18 August 1988 Band Structure Of ZnSe-ZnTe Superlattices Calculated By K • P Theory
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Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988)
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
ZnSe-ZnTe superlattices have generated a great deal of interest in the optoelectonics arena particularly as visible light emitters. There is a large research effort particularly by the Japanese to make blue light emitting diodes (LEDs) with ZnSe-ZnTe superlattices. Successful growth of these superlattices has been achieved with molecular beam epitaxy (MBE). Photoluminescence from this system suggests that the valence band offset between ZnSe and ZnTe is about 1.0 eV. We have performed band structure calculations based on k•p theory to study the dependence of the valence band offset and the band gap on strain. Based on the assumption that the photoluminescence from the superlattice is due to the emission from a Tel bound exciton in ZnSe, we have fit the experimental photoluminescence data with k•p theory to obtain the best value of the valence band offset. The value we find is 0.97 ± 0.10 eV. Alternatively, assuming that the photoluminescence is due to band to band transitions, we obtain a valence band offset of 1.20 ± 0.13 eV. We have also calculated the superlattice band gap as a function of the constituent material layer thicknesses for the valence band offsets quoted. We expect these calculations to play an important role in gaining an understanding of the ZnSe-ZnTe superlattices.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Rajakarunanayake, R. H. Miles, G. Y. Wu, and T. C. McGill "Band Structure Of ZnSe-ZnTe Superlattices Calculated By K • P Theory", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988);

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