Electron Capture Into Quantum Wells

B. K. Ridley

doi:10.1117/12.947295

18 August 1988 Electron Capture Into Quantum Wells

B. K. Ridley

Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947295
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The capture of electrons by quantum wells via phonon emission involves a complex interplay of the polar interaction, the electronic subband structure, and the mode patterns of the LO phonons. Simple theoretical models for these are described, and it is shown that alongside the more familiar electron resonances lie sharp phonon resonances which markedly affect the dependence of capture rate on well-width. The effect of these resonances is much weaker in intersubband transitions. It is pointed out that in practice the combination of layer fluctuations and randomized injection of carriers lead to a capture time of about 1ps in the AlGaAs/CaAs system which is only very weakly dependent on well-width. On the other hand the intersubband scattering rate is expected to be appreciably dependent on well-width, but the predicted magnitude is a few times larger than observed and the observed trend with well-width is weak.

Citation Download Citation

B. K. Ridley "Electron Capture Into Quantum Wells", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947295

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