Scanning Tunneling Spectroscopy

D. K. Biegelsen

doi:10.1117/12.947433

9 August 1988 Scanning Tunneling Spectroscopy

D. K. Biegelsen

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947433
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Scanning tunneling microscopy (STM) provides a means of directly imaging surface topography with atomic scale resolution. Scanning tunneling spectroscopy (STS) usually refers to the image-wise determination of the tunnel current variation with bias voltage for fixed tunnel gap width. Results can be related to the density of filled and empty surface electronic states. The association of energetic features with spatially localized features is a unique capability. Other variations of STS are inelastic tunneling imaging and barrier spectroscopic imaging. All these techniques are described and representative examples given to provide a survey of STS.

Citation Download Citation

D. K. Biegelsen "Scanning Tunneling Spectroscopy", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947433

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