Paper
9 August 1988 Surface Potential Characterization Of The Photoelectrochemical Etching System By Photoreflectance And Electroreflectance Techniques
A. E. Willner, O. J. Glembocki, D. V. Podlesnik, E. D. Palik, R. M. Osgood Jr.
Author Affiliations +
Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947412
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We use the modulation techniques of electrolyte electroreflectance and photoreflectance to locally probe the semiconductor surface potential of various semiconductor/electrolyte interfaces. Changes in the surface potential are important in determining the rate of charge transfer in both electrode and electrodeless photochemical etching.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Willner, O. J. Glembocki, D. V. Podlesnik, E. D. Palik, and R. M. Osgood Jr. "Surface Potential Characterization Of The Photoelectrochemical Etching System By Photoreflectance And Electroreflectance Techniques", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947412
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Cited by 2 scholarly publications.
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KEYWORDS
Etching

Semiconductors

Interfaces

Modulation

Spectroscopy

Helium neon lasers

Reflectivity

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