Dual wavelength laser damage mechanisms in the ultra-short pulse regime

Mark Gyamfi; Marion Costella; Thomas Willemsen; Peter Jürgens; Mathias Mende; Lars Jensen; Detlev Ristau

doi:10.1117/12.2245156

6 December 2016 Dual wavelength laser damage mechanisms in the ultra-short pulse regime

Mark Gyamfi, Marion Costella, Thomas Willemsen, Peter Jürgens, Mathias Mende, Lars Jensen, Detlev Ristau

Author Affiliations +

Proceedings Volume 10014, Laser-Induced Damage in Optical Materials 2016; 100141B (2016) https://doi.org/10.1117/12.2245156
Event: SPIE Laser Damage, 2016, Boulder, Colorado, United States

Abstract

New ultrashort pulse laser systems exhibit an ever increasing performance which includes shorter pulses and higher pulse energies. Optical components used in these systems are facing increasing requirements regarding their durability, and therefore understanding of the damage mechanism is crucial. In the ultra-short pulse regime electron ionization processes control the damage mechanisms. For the single wavelength, single pulse regime the Keldysh [1] and the Drude model [2] allow a quantitative description of these ionization processes. However, in this model, the electrical field is restricted to a single wavelength, and therefore it cannot be applied in the case of irradiation with two pulses at different wavelengths. As frequency conversion is becoming more common in ultra-short pulse applications, further research is needed in this field to predict the damage resistance of optical components. We investigate the damage behavior of high reflective mirrors made of different metal oxide materials under simultaneous exposure to ultra-short pulses at the wavelengths 387.5 nm and 775 nm, respectively.

Citation Download Citation

Mark Gyamfi, Marion Costella, Thomas Willemsen, Peter Jürgens, Mathias Mende, Lars Jensen, and Detlev Ristau "Dual wavelength laser damage mechanisms in the ultra-short pulse regime", Proc. SPIE 10014, Laser-Induced Damage in Optical Materials 2016, 100141B (6 December 2016); https://doi.org/10.1117/12.2245156

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