Recent progress in 1.3- and 1.5-um waveband wafer-fused VCSELs

A. Mereuta; A. Caliman; A. Sirbu; V. Iakovlev; D. Ellafi; A. Rudra; P. Wolf; D. Bimberg; E. Kapon

doi:10.1117/12.2246208

9 November 2016 Recent progress in 1.3- and 1.5-μm waveband wafer-fused VCSELs

A. Mereuta, A. Caliman, A. Sirbu, V. Iakovlev, D. Ellafi, A. Rudra, P. Wolf, D. Bimberg, E. Kapon

Proceedings Volume 10017, Semiconductor Lasers and Applications VII; 1001702 (2016) https://doi.org/10.1117/12.2246208
Event: SPIE/COS Photonics Asia, 2016, Beijing, China

Abstract

The progress of 1.3- and 1.5-μm waveband wafer-fused VCSELs is reported. The emission of single mode power of 6 - 8 mW at room temperature and up to 3 mW at 80°C were demonstrated. 10-Gb/s full wavelength-set VCSEL devices for CWDM systems with high yield and Telcordia-reliability were industrially manufactured. By increasing the compressive strain in the QWs and reducing the cavity photon life time the modulation bandwidth was increased to 11.5 GHz, and large-signal data transmission experiments show error-free operation and open eye diagrams from 25 to 35 Gb/s in both B2B and after 10-km, respectively.

Citation Download Citation

A. Mereuta, A. Caliman, A. Sirbu, V. Iakovlev, D. Ellafi, A. Rudra, P. Wolf, D. Bimberg, and E. Kapon "Recent progress in 1.3- and 1.5-μm waveband wafer-fused VCSELs", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 1001702 (9 November 2016); https://doi.org/10.1117/12.2246208

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