High efficiency single transverse mode photonic band crystal lasers with low vertical divergence

Shaoyu Zhao; Hongwei Qu; Yun Liu; Lunhua Li; Yang Chen; Xuyan Zhou; Yuzhe Lin; Anjin Liu; Aiyi Qi; Wanhua Zheng

doi:10.1117/12.2246318

31 October 2016 High efficiency single transverse mode photonic band crystal lasers with low vertical divergence

Shaoyu Zhao, Hongwei Qu, Yun Liu, Lunhua Li, Yang Chen, Xuyan Zhou, Yuzhe Lin, Anjin Liu, Aiyi Qi, Wanhua Zheng

Proceedings Volume 10019, Optoelectronic Devices and Integration VI; 100190A (2016) https://doi.org/10.1117/12.2246318
Event: SPIE/COS Photonics Asia, 2016, Beijing, China

Abstract

High efficiency 980 nm longitudinal photonic band crystal (PBC) edge emitting laser diodes are designed and fabricated. The calculated results show that eight periods of Al_0.1Ga_0.9As and Al_0.25Ga_0.75As layer pairs can reduce the vertical far field divergence to 10.6° full width at half maximum (FWHM). The broad area (BA) lasers show a very high internal quantum efficiency ηi of 98% and low internal loss αi of 1.92 cm-1. Ridge waveguide (RW) lasers with 3 mm cavity length and 5um strip width provide 430 mW stable single transverse mode output at 500 mA injection current with power conversion efficiency (PCE) of 47% under continuous wave (CW) mode. A maximum PCE of 50% is obtained at the 300 mA injection current. A very low vertical far field divergence of 9.4° is obtained at 100 mA injection. At 500 mA injection, the vertical far field divergence increases to 11°, the beam quality factors M² values are 1.707 in vertical direction and 1.769 in lateral direction.

Citation Download Citation

Shaoyu Zhao, Hongwei Qu, Yun Liu, Lunhua Li, Yang Chen, Xuyan Zhou, Yuzhe Lin, Anjin Liu, Aiyi Qi, and Wanhua Zheng "High efficiency single transverse mode photonic band crystal lasers with low vertical divergence", Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 100190A (31 October 2016); https://doi.org/10.1117/12.2246318

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