Temperature dependence of spectroscopic and electrical properties of Cr(Fe):ZnSe laser active materials

Ozarfar Gafarov; Rick Watkins; Chandler Bernard; Vladimir Fedorov; Sergey Mirov

doi:10.1117/12.2252670

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17 February 2017 Temperature dependence of spectroscopic and electrical properties of Cr(Fe):ZnSe laser active materials

Ozarfar Gafarov, Rick Watkins, Chandler Bernard, Vladimir Fedorov, Sergey Mirov

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Proceedings Volume 10082, Solid State Lasers XXVI: Technology and Devices; 1008226 (2017) https://doi.org/10.1117/12.2252670
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

Temperature influence on spectroscopic characteristics is crucial for many aspects of laser engineering including output noise, single frequency oscillation, and thermal bistability. We report on the spectroscopic characterization of chromium and iron doped ZnSe gain element media at temperatures ranging from 77K to 389K. Heating of Cr:ZnSe resulted in the absorption peak shifting to a shorter wavelength from 1.806 μm at 77K to 1.753 μm at 389K. It also resulted in broadening of the absorption band from Δλ=260 cm^-1nm to Δλ=373 cm^-1nm and decreasing of the absorption cross section by 69%. Similar characterization was done for Fe:ZnSe laser material. The cooling of the Fe:ZnSe crystal from room temperature to 77K resulted in a 32% increase of the absorption coefficient at 2.94 μm which is usually used as a pump source. We also studied the absorption of the electrical free-carriers in n-type Al:ZnSe crystals in visible and mid- IR absorption spectral ranges. Diffusion of Al into ZnSe samples was achieved by annealing at 1000°C during 4 days in Al vapors. It was demonstrated that free-carriers absorption of Al:ZnSe samples with resistivity σ=100-150 Ω×cm resulted in an increase of the absorption coefficient at 2.4 μm up to 2.5 cm^-1.

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Ozarfar Gafarov, Rick Watkins, Chandler Bernard, Vladimir Fedorov, and Sergey Mirov "Temperature dependence of spectroscopic and electrical properties of Cr(Fe):ZnSe laser active materials", Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 1008226 (17 February 2017); https://doi.org/10.1117/12.2252670

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