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22 February 2017 Broadened waveguide laser structures at 780 nm
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Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860M (2017)
Event: SPIE LASE, 2017, San Francisco, California, United States
Two AlGaAs/GaAs broadened waveguide laser structures, one asymmetric, one nearly symmetric, were designed for high power at about 780 nm. The design concept is based on low losses and higher gain for the fundamental mode with higher losses and lower gain for higher-order modes. To achieve these results, the positions of the quantum wells, thicknesses of the cladding layers, doping profiles, and the compositions of all the layers are carefully chosen. The structures are designed to have a loss of about 0.5/cm for the TE0 mode and more than 5 /cm for higher order modes for both structures. The asymmetric structure has a lower threshold current density (~750 A/cm2) and a higher slope (about 0.9 W/A) of the light-current curve compared to the symmetric structure. Increased L-I slope for the asymmetric structure results mainly from increased hole injection efficiency because the quantum wells are close to the p-side. Ridge-guide lasers fabricated with the asymmetric structure produced greater than 350 mW at 25°C. The beam divergence of the asymmetric structure was 6° × 14°.
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Jin Huang, Gary Evans, Jerome Butler, Linglin Jiang, Preston Young, Duy Phan, Daniel Smith, and Mark Schuckert "Broadened waveguide laser structures at 780 nm", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860M (22 February 2017);

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