Device design for global shutter operation in a 1.1-um pixel image sensor and its application to near-infrared sensing

Zach M. Beiley; Robin Cheung; Erin F. Hanelt; Emanuele Mandelli; Jet Meitzner; Jae Park; Andras Pattantyus-Abraham; Edward H. Sargent

doi:10.1117/12.2253219

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22 February 2017 Device design for global shutter operation in a 1.1-μm pixel image sensor and its application to near infrared sensing

Zach M. Beiley, Robin Cheung, Erin F. Hanelt, Emanuele Mandelli, Jet Meitzner, Jae Park, Andras Pattantyus-Abraham, Edward H. Sargent

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Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 100981L (2017) https://doi.org/10.1117/12.2253219
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Global shutter is a feature of some CMOS image sensors that allows capture of an entire image at a single point in time. We discuss how the device architecture of InVisage’s QuantumFilm enables global shutter operation by controlling the bias on the device stack without an additional transistor, giving high shutter efficiency in a 1.1 μm pixel CMOS image sensor. We use drift-diffusion device simulations to inform our design and reveal device and material properties that are key for carrier selectivity. Based on our device model, we fabricated global-shutter-enabled QuantumFilm devices for near infrared sensing applications and present a characterization of our devices.

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Zach M. Beiley, Robin Cheung, Erin F. Hanelt, Emanuele Mandelli, Jet Meitzner, Jae Park, Andras Pattantyus-Abraham, and Edward H. Sargent "Device design for global shutter operation in a 1.1-μm pixel image sensor and its application to near infrared sensing", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100981L (22 February 2017); https://doi.org/10.1117/12.2253219

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