Modeling of frequency response in strain balanced SiGeSn/GeSn quantum well infrared photodetector

Prakash Pareek; Ravi Ranjan; Mukul K. Das

doi:10.1117/12.2251300

22 February 2017 Modeling of frequency response in strain balanced SiGeSn/GeSn quantum well infrared photodetector

Prakash Pareek, Ravi Ranjan, Mukul K. Das

Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 100981P (2017) https://doi.org/10.1117/12.2251300
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this work carrier transport mechanism in strain balanced SiGeSn/GeSn QWIP is studied to obtain the frequency response. Initially, a QWIP model is proposed in which a 76Å thick Ge_0.83Sn_0.17 layer is sandwiched between two tensile strained Si_0.09Ge_0.8 Sn_0.11layers to form a type-I single strain balanced quantum-well infrared photodetector (SQWIP). The rate equation in quantum well and continuity equation over the well are solved simultaneously to obtain frequency response. The 3dB bandwidth obtained from frequency response is evaluated as 47 GHz at zero bias which increased with the applied bias. Also, the effect of bias dependent escape rates of carrier from the quantum well on the 3dB bandwidth is studied.

Citation Download Citation

Prakash Pareek, Ravi Ranjan, and Mukul K. Das "Modeling of frequency response in strain balanced SiGeSn/GeSn quantum well infrared photodetector", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100981P (22 February 2017); https://doi.org/10.1117/12.2251300

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