CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10100 > Article
Presentation
19 April 2017 Growth of GaAs/AlAs distributed Bragg reflector on a concave GaAs substrate (Conference Presentation)
Kouichi Akahane, Tetsuya Ido, Naokatsu Yamamoto, Kazuto Mochizuki, Yusuke Furukawa
Author Affiliations +
Proceedings Volume 10100, Optical Components and Materials XIV; 1010019 (2017) https://doi.org/10.1117/12.2251380
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
High reflection dielectric distributed Bragg reflector (DBR) can be used with high Q optical cavity to narrow down the spectrum optical source, for experimental quantum electro-dynamics, etc. To construct a free space optical cavity for a local oscillator of the state-of-the-art optical frequency standards, concave mirrors are used as one of the end mirrors of the cavity. Usually, the high reflection DBR is fabricated by depositing dielectric materials on a glass substrate. However, the ultimate stability of the optical cavity is limited by the thermal noise of dielectric DBR. To overcome this problem, a crystalline DBR was proposed to stabilize the optical cavity, which can reduce thermal noise. In this study, we fabricated crystalline DBR by GaAs/AlAs compound semiconductor on a concave GaAs substrate. Although a traditional semiconductor substrate has atomically flat surface, we fabricated a concave surface with a curvature radius of 1000 mm on the GaAs substrate by optical quality polishing. Then, we carried out wet etching and introduced it in vacuum chamber for molecular beam epitaxy (MBE). In the MBE growth chamber, we carried out thermal cleaning with As4 at a substrate temperature of 600°C. Next, the GaAs/AlAs DBR structure was grown at 580°C. The evaluation of surface roughness was conducted by atomic force microscopy, which showed a roughness of 0.165 nm in 1 × 1 um measurement such that a very smooth surface can be obtained.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Kouichi Akahane, Tetsuya Ido, Naokatsu Yamamoto, Kazuto Mochizuki, and Yusuke Furukawa "Growth of GaAs/AlAs distributed Bragg reflector on a concave GaAs substrate (Conference Presentation)", Proc. SPIE 10100, Optical Components and Materials XIV, 1010019 (19 April 2017); https://doi.org/10.1117/12.2251380
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Gallium arsenide
Optical resonators
Dielectrics
Distributed Bragg reflectors
Crystals
Free space optics
Mirrors
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top