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24 February 2017 MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101051N (2017)
Event: SPIE OPTO, 2017, San Francisco, California, United States
MgZnO is an attractive semiconductor alloy for UV optoelectronic and electronic devices. Due to recent progress and availability of high quality Ga2O3 substrates and its high solar-blind bandgap of ~4.9 eV, it is desirable to investigate its application for solar-blind applications as a potential substrate alternative to sapphire for MgZnO. MgZnO alloys have been grown using plasma-assisted molecular beam epitaxy on Sn doped n-type (010) β-Ga2O3 substrates. It was found MgZnO growth with a MgO buffer layer has a rocksalt lattice structure. In-situ RHEED observations show that the sample grown with a MgO buffer shows two-dimensional growth and a surface roughness with root-mean-square (RMS) below 2 nm. On the other hand, MgZnO grown without a MgO buffer has a mixed phase of rocksalt and wurtzite lattice structures. Additionally, as the initial step for the fabrication of tunable wavelength solar-blind photodetectors, Schottky barrier photodetectors have been fabricated, demonstrating zero (0 V) bias responsivity of 0.1 μA/W (rocksalt MgZnO), 0.7 μA/W (mixed phase MgZnO) and 1.3 μA/W (mixed phase MgZnO) at 230 nm, 310 nm and 335 nm, respectively.
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Mykyta Toporkov, Partha Mukhopadhyay, Haider Ali, Valeria Beletsky, Fikadu Alema, Andrei Osinsky, and Winston V. Schoenfeld "MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051N (24 February 2017);

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