Silicon-based GeSn photodetector and light emitter towards mid-Infrared applications

Wei Du; Seyed Ghetmiri; Sattar Al-Kabi; Aboozar Mosleh; Thach Pham; Yiyin Zhou; Huong Tran; Greg Sun; Richard Soref; Joe Margetis; John Tolle; Baohua Li; Mansour Mortazavi; Hameed Naseem; Shui-Qing Yu

doi:10.1117/12.2253067

20 February 2017 Silicon-based Ge_0.89Sn_0.11 photodetector and light emitter towards mid-infrared applications

Wei Du, Seyed Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Thach Pham, Yiyin Zhou, Huong Tran, Greg Sun, Richard Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, Shui-Qing Yu

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Proceedings Volume 10108, Silicon Photonics XII; 1010813 (2017) https://doi.org/10.1117/12.2253067
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

The GeSn alloy with Sn composition of 11% has been grown using an industry standard reduced-pressure chemical vapor deposition reactor in a single run epitaxy. Low-cost commercially available GeH₄ and SnCl₄ were used as Ge and Sn precursors, respectively. The material characterization showed that the threading dislocations were trapped in the Ge/GeSn interface and do not propagate to the GeSn layer, resulting in high quality material. The temperature-dependent photoluminescence study revealed that the direct bandgap GeSn alloy was achieved, as the emission intensity significantly increased at low temperature. The sample was than fabricated into photoconductive detectors and waveguide lasers. For the photodetector, the spectral response wavelength cutoff at 3.0 μm was observed. The specific detectivity of 3.5×10¹⁰ cm•Hz^1/2W^-1 was achieved, which is close to that of market dominating InGaAs photodetectors that are operating in the same wavelength range; For the waveguide laser, the lasing threshold pumping power density of 86.5 kW/cm² at 10 K and the highest operating temperature of 110 K were obtained. Furthermore, the characteristic temperature was evaluated as 65 K.

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Wei Du, Seyed Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Thach Pham, Yiyin Zhou, Huong Tran, Greg Sun, Richard Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu "Silicon-based Ge_0.89Sn_0.11 photodetector and light emitter towards mid-infrared applications", Proc. SPIE 10108, Silicon Photonics XII, 1010813 (20 February 2017); https://doi.org/10.1117/12.2253067

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