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20 February 2017 Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications
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Proceedings Volume 10108, Silicon Photonics XII; 1010813 (2017)
Event: SPIE OPTO, 2017, San Francisco, California, United States
The GeSn alloy with Sn composition of 11% has been grown using an industry standard reduced-pressure chemical vapor deposition reactor in a single run epitaxy. Low-cost commercially available GeH4 and SnCl4 were used as Ge and Sn precursors, respectively. The material characterization showed that the threading dislocations were trapped in the Ge/GeSn interface and do not propagate to the GeSn layer, resulting in high quality material. The temperature-dependent photoluminescence study revealed that the direct bandgap GeSn alloy was achieved, as the emission intensity significantly increased at low temperature. The sample was than fabricated into photoconductive detectors and waveguide lasers. For the photodetector, the spectral response wavelength cutoff at 3.0 μm was observed. The specific detectivity of 3.5×1010 cm•Hz1/2W-1 was achieved, which is close to that of market dominating InGaAs photodetectors that are operating in the same wavelength range; For the waveguide laser, the lasing threshold pumping power density of 86.5 kW/cm2 at 10 K and the highest operating temperature of 110 K were obtained. Furthermore, the characteristic temperature was evaluated as 65 K.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Du, Seyed Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Thach Pham, Yiyin Zhou, Huong Tran, Greg Sun, Richard Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu "Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications", Proc. SPIE 10108, Silicon Photonics XII, 1010813 (20 February 2017);


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