Mid-infrared SOI micro-ring modulator operating at 2.02 microns

David E. Hagan; Andrew P. Knights; Liam G. R. Dow

doi:10.1117/12.2250586

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20 February 2017 Mid-infrared SOI micro-ring modulator operating at 2.02 microns

David E. Hagan, Andrew P. Knights, Liam G. R. Dow

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Proceedings Volume 10108, Silicon Photonics XII; 1010814 (2017) https://doi.org/10.1117/12.2250586
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Micro-ring modulators for use in high-speed telecommunication transceivers designed for silicon-on-insulator (SOI) for 2 μm wavelength operation are described and simulated with comparison to 1.55 μm. Device simulations show improved DC modulation performance due to the free-carrier effect described in the plasma dispersion relations which is stronger for longer wavelengths. WDM applications are described and simulated. Micro-ring modulator devices were designed and fabricated at A*STAR IME and are pending measurement.

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David E. Hagan, Andrew P. Knights, and Liam G. R. Dow "Mid-infrared SOI micro-ring modulator operating at 2.02 microns", Proc. SPIE 10108, Silicon Photonics XII, 1010814 (20 February 2017); https://doi.org/10.1117/12.2250586

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