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27 January 2017 Single-frequency infrared tunable lasers with single-angle-facet gain chips for sensing applications
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In this work we present latest achievements on gain chips as sources for single-frequency tunable laser absorption spectroscopy and sensing. External cavity lasers based on Brolis Semiconductors (2.05 – 2.45) μm wavelengths GaSb gain chips exhibited single mode laser emission with linewidths <100 kHz and output powers of <5 mW in the entire tuning range of <100 nm per chip. Continuous current tuning of 60 GHz and mode-hop free piezo tuning of 26 GHz were demonstrated. Additionally, we report on extended wavelengths range by demonstrating low spectral modulation 850 nm GaAs-based gain chips. Finally, experimental results on GaSb-based gain chip integration with silicon photonics are presented.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ieva Šimonytė, Laurynas Andrulionis, Justinas Aleknavičius, Greta Naujokaitė, Edgaras Dvinelis, Augustinas Trinkūnas, Mindaugas Greibus, Augustinas Vizbaras, and Kristijonas Vizbaras "Single-frequency infrared tunable lasers with single-angle-facet gain chips for sensing applications", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101110H (27 January 2017);

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