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27 January 2017 GaAsP nanowires and nanowire devices grown on silicon substrates
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Ternary GaAsP nanowires (NWs) have gained great attention due to their structure-induced novel properties and band gap that can cover the working wavelength from green to infrared. However, the growth and hence applications of selfcatalyzed GaAsP NWs are troubled by the difficulties in controlling P and the complexities in growing ternary NWs. In this work, self-catalyzed core-shell GaAsP NWs were successfully grown and demonstrated almost stacking-fault-free zinc blend crystal structure. By using these core-shell GaAsP NWs, single NW solar cells have been fabricated and a single NW world record efficiency of 10.2% has been achieved. Those NWs also demonstrated their potential application in water splitting. A wafer-scale solar-to-hydrogen conversion efficiency of 0.5% has been achieved despite the low surface coverage. These results open up new perspectives for integrating III−V nanowire photovoltaics on a silicon platform by using self-catalyzed GaAsP core−shell nanowires.
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© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yunyan Zhang, Martin Aagesen, Ana M. Sanchez, Richard Beanland, Jiang Wu, and Huiyun Liu "GaAsP nanowires and nanowire devices grown on silicon substrates", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101110X (27 January 2017);


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