InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain

Q. Durlin; J. P. Perez; R. Rossignol; J. B. Rodriguez; L. Cerutti; B. Delacourt; J. Rothman; C. Cervera; P. Christol

doi:10.1117/12.2250908

Translator Disclaimer

27 January 2017 InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain

Q. Durlin, J. P. Perez, R. Rossignol, J. B. Rodriguez, L. Cerutti, B. Delacourt, J. Rothman, C. Cervera, P. Christol

Author Affiliations +

Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 1011112 (2017) https://doi.org/10.1117/12.2250908
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We studied the Ga-free InAs/InAsSb type-II superlattice (T2SL) period, thickness and antimony composition, in order to define an optimized structure suitable for detection of the full mid-wavelength infrared domain (MWIR). The SL structures were fabricated by MBE on n-type GaSb substrates and exhibited cut-off wavelengths between 5μm and 5.5μm at 150K. The growth procedure used to achieve strain-balanced structures is reported and first structural and optical results, made of high-resolution Xray diffraction pattern, AFM image scan, photoluminescence (PL) and time resolved photoluminescence measurements (TRPL), are presented and analyzed.

Conference Presentation

Citation Download Citation

Q. Durlin, J. P. Perez, R. Rossignol, J. B. Rodriguez, L. Cerutti, B. Delacourt, J. Rothman, C. Cervera, and P. Christol "InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011112 (27 January 2017); https://doi.org/10.1117/12.2250908

ACCESS THE FULL ARTICLE