Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures

R. Rossignol; J. B. Rodriguez; Q. Durlin; H. Aït-Kaci; J. P. Perez; F. Martinez; F. Gonzales Posada; P. Christol

doi:10.1117/12.2251153

27 January 2017 Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures

R. Rossignol, J. B. Rodriguez, Q. Durlin, H. Aït-Kaci, J. P. Perez, F. Martinez, F. Gonzales Posada, P. Christol

Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 101111H (2017) https://doi.org/10.1117/12.2251153
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

The knowledge of carrier concentration of doped or non-intentionally doped layer structures grown by Molecular Beam Epitaxy (MBE) is crucial to fabricate and manage design of new advanced photodetectors called "barrier structures". This communication reports on capacitance-voltage (C-V) study on MOS structure. Simulation to define specific MOS design, allowing doping layer concentration extraction by measurements, is performed. MOS structures based on InAs/GaSb Longwave infrared (LWIR) superlattice have been fabricated and characterized. Results obtained were analyzed and compared with simulations.

Conference Presentation

Citation Download Citation

R. Rossignol, J. B. Rodriguez, Q. Durlin, H. Aït-Kaci, J. P. Perez, F. Martinez, F. Gonzales Posada, and P. Christol "Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111H (27 January 2017); https://doi.org/10.1117/12.2251153

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