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27 January 2017 Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor
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This paper reviews recent advancement on the research toward graphene-based terahertz (THz) lasers. Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the THz spectral range, which may lead to new types of THz lasers. A forward-biased graphene structure with a lateral p-i-n junction was implemented in a distributed-feedback (DFB) dual-gate graphene-channel FET and observed a single mode emission at 5.2 THz at 100K. The observed spectral linewidth fairly agrees with the modal gain analysis based on DFB-Fabry-Perrot hybrid-cavitymode modeling. Although the results obtained are still preliminary level, the observed emission could be interpreted as THz lasing in population-inverted graphene by carrier-injection.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Tamamushi, T. Watanabe, J. Mitsushio, A. A. Dubinov, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji "Current-injection terahertz lasing in a distributed-feedback dual-gate graphene-channel transistor", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011126 (27 January 2017);

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