50Gb/s PAM-4 oxide VCSEL development progress at Broadcom

Jingyi Wang; M. V. Ramana Murty; Charlie Wang; David Hui; Ann Lehman Harren; Hsu-Hao Chang; Zheng-Wen Feng; Thomas R. Fanning; Aaditya Sridhara; Sumitro-Joyo Taslim; Xinle Cai; Jason Chu; Laura M. Giovane

doi:10.1117/12.2250211

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25 February 2017 50Gb/s PAM-4 oxide VCSEL development progress at Broadcom

Jingyi Wang, M. V. Ramana Murty, Charlie Wang, David Hui, Ann Lehman Harren, Hsu-Hao Chang, Zheng-Wen Feng, Thomas R. Fanning, Aaditya Sridhara, Sumitro-Joyo Taslim, Xinle Cai, Jason Chu, Laura M. Giovane

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Proceedings Volume 10122, Vertical-Cavity Surface-Emitting Lasers XXI; 1012202 (2017) https://doi.org/10.1117/12.2250211
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

This paper will review the device design and performance of Broadcom’s 50Gb/s PAM-4 VCSEL to enable the next generation of transceivers using a PAM-4 advanced modulation scheme at 25-28 GBd. The VCSEL has been optimized to minimize noise and improve dynamic performance for cleaner eyes. Preliminary wear out lifetime studies indicate that the time to 1% failure exceeds 10 years, making the VCSELs suitable for data communication applications.

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Jingyi Wang, M. V. Ramana Murty, Charlie Wang, David Hui, Ann Lehman Harren, Hsu-Hao Chang, Zheng-Wen Feng, Thomas R. Fanning, Aaditya Sridhara, Sumitro-Joyo Taslim, Xinle Cai, Jason Chu, and Laura M. Giovane "50Gb/s PAM-4 oxide VCSEL development progress at Broadcom", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 1012202 (25 February 2017); https://doi.org/10.1117/12.2250211

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