Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

A. V. Babichev; L. Ya. Karachinsky; I. I. Novikov; A. G. Gladyshev; S. Mikhailov; V. Iakovlev; A. Sirbu; G. Stepniak; L. Chorchos; J. P. Turkiewicz; M. Agustin; N. N. Ledentsov; K. O. Voropaev; A. S. Ionov; A. Yu. Egorov

doi:10.1117/12.2250842

25 February 2017 Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. G. Gladyshev, S. Mikhailov, V. Iakovlev, A. Sirbu, G. Stepniak, L. Chorchos, J. P. Turkiewicz, M. Agustin, N. N. Ledentsov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov

Author Affiliations +

Proceedings Volume 10122, Vertical-Cavity Surface-Emitting Lasers XXI; 1012208 (2017) https://doi.org/10.1117/12.2250842
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current < 2.5 mA and output optical power > 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value-reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of ~ 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)^1/2. Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

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A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. G. Gladyshev, S. Mikhailov, V. Iakovlev, A. Sirbu, G. Stepniak, L. Chorchos, J. P. Turkiewicz, M. Agustin, N. N. Ledentsov, K. O. Voropaev, A. S. Ionov, and A. Yu. Egorov "Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 1012208 (25 February 2017); https://doi.org/10.1117/12.2250842

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