Modelling of the modulation properties of arsenide and nitride VCSELs

Michał Wasiak; Patrycja Śpiewak; Philip Moser; Marcin Gębski; Holger Schmeckebier; Robert P. Sarzała; James A. Lott

doi:10.1117/12.2253646

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25 February 2017 Modelling of the modulation properties of arsenide and nitride VCSELs

Michał Wasiak, Patrycja Śpiewak, Philip Moser, Marcin Gębski, Holger Schmeckebier, Robert P. Sarzała, James A. Lott

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Proceedings Volume 10122, Vertical-Cavity Surface-Emitting Lasers XXI; 101220A (2017) https://doi.org/10.1117/12.2253646
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser’s equivalent circuit.

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Michał Wasiak, Patrycja Śpiewak, Philip Moser, Marcin Gębski, Holger Schmeckebier, Robert P. Sarzała, and James A. Lott "Modelling of the modulation properties of arsenide and nitride VCSELs", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220A (25 February 2017); https://doi.org/10.1117/12.2253646

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