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20 February 2017 Lasing dynamics of very long (13.5mm) tapered laser emitting at 975 nm
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Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101230E (2017)
Event: SPIE OPTO, 2017, San Francisco, California, United States
Mode-locked semiconductor laser technology is a promising technology candidate considered by European Space Agency (ESA) for optical metrology systems and other space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement. For these applications, we have designed, realized and characterized a multi-section monolithic-cavity tapered laser diode with a record cavity length of 13.5mm. The laser operates at 975nm wavelength with average output power up to 600mW. It is based on a MOVPE grown laser structure with Aluminium free active region enabling high optical gain, low internal losses and low series resistance. It reaches passive mode-locking operation on fundamental cavity round trip frequency of 2.88GHz with chirped pulse width of 6.2ps and time bandwidth product of 8 for the average output power of 250mW. Alongside with passive mode-locking operation, we discuss other lasing regimes in these very long tapered lasers.
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M. Krakowski, P. Resneau, M. Garcia, E. Vinet, Y. Robert, M. Lecomte, O. Parillaud, B. Gerard, and D. L. Boiko "Lasing dynamics of very long (13.5mm) tapered laser emitting at 975 nm", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230E (20 February 2017);


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