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20 February 2017 Fabrication and characterization of photonic-crystal surface-emitting lasers with triangular double-hole lattice points
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Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101231O (2017)
Event: SPIE OPTO, 2017, San Francisco, California, United States
Recently, W-class photonic-crystal surface-emitting lasers (PCSELs) with both a single spectrum and narrow spot beam pattern are reported. These highly coherent PCSEL properties cause a highly bright laser light that is useful for various applications. To improve the PCSEL output power, it is important to enlarge the emitting area to reduce the heat generation effect. However, multi-mode oscillation occurs in a broad emitting area because the difference in the threshold gain between the fundamental and higher modes becomes narrower as the emitting area is broadened. In this work, we fabricate PCSELs with double-hole lattice points that decrease the optical confinement to prevent multi-mode oscillation. The fabricated device, consisting of an AlGaAs/InGaAs material system designed to be oscillated at a wavelength of 940nm, has an emitting area of 300 × 300 μm2. In a square lattice photonic crystal whose lattice period equals the lasing wavelength embedded in PCSELs, the distance between the centers of the double hole is set to one quarter of the lasing wavelength to decrease in-plane coupling caused by interference. We confirm that this device is oscillated at the Γ point of band edge A in the photonic band structure. The peak power is more than 5 W under pulse operation at 10 A. The device has a narrow beam divergence of less than 1° and single lobe spectrum in spite of the broad emitting area, so these double-hole lattice points are an effective structure to improve the PCSEL output power.
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Akiyoshi Watanabe, Kazuyoshi Hirose, Takahiro Sugiyama, Menaka De Zoysa, Yoshinori Tanaka, Hitoshi Kitagawa, and Susumu Noda "Fabrication and characterization of photonic-crystal surface-emitting lasers with triangular double-hole lattice points", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231O (20 February 2017);

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