Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

Desiree Monti; Matteo Meneghini; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Johannes Glaab; Jens Rass; Sven Einfeldt; Frank Mehnke; Tim Wernicke; Michael Kneissl

doi:10.1117/12.2253843

16 February 2017 Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Tim Wernicke, Michael Kneissl

Author Affiliations +

Proceedings Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI; 101240T (2017) https://doi.org/10.1117/12.2253843
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

The paper reports the analysis of (In)AlGaN-based UV-B LEDs degradation under constant current stress, and investigates the impact of defects in changing the devices electro-optical performance. The study is based on combined electro-optical characterization, deep-level transient- (DLTS) and photocurrent spectroscopy. UV-B LEDs show a decrease of the optical power during stress, more pronounced at low measuring current levels, indicating that the degradation is related to an increase of Shockley-Read-Hall (SRH) recombination. DLTS measurements allowed the identification of three defects, in particular one ascribed to Mg-related acceptor traps presence. Photocurrent spectroscopy allows the localization of the defects close to the mid-gap.

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Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Tim Wernicke, and Michael Kneissl "Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240T (16 February 2017); https://doi.org/10.1117/12.2253843

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