Regarding the metal 2 layer, imec is evaluating two integration approaches: EUV single print and SAQP+EUV Block. Extensive work is reported on both approaches2,3. The work detailed in this paper will deal about the computational work done prior to tape-out for the EUV direct print option.
We will discuss the EUV source mask optimization for an ASML NXE:3300 EUV scanner. Afterwards we will shortly touch upon OPC compact modeling and more extensively on OPC itself. Based on the current design rules and MRC, printability checks indicate that only limited process windows are obtained. We propose ways to improve the printability through MRC and design. Applying those changes can potentially lead to a sufficient process window.
