CD-SEM distortion quantification for EPE metrology and contour analysis

Harm Dillen; Ton Kiers; Sandip Halder; Thomas I. Wallow; Frieda van Roey

doi:10.1117/12.2260664

Translator Disclaimer

28 March 2017 CD-SEM distortion quantification for EPE metrology and contour analysis

Harm Dillen, Ton Kiers, Sandip Halder, Thomas I. Wallow, Frieda van Roey

Author Affiliations +

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 1014515 (2017) https://doi.org/10.1117/12.2260664
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Given the potential impact of distortions within the Field Of View (FOV) of the SEM, we need a method to quantify and describe them. We will show a method to find the magnitude and directions of the distortions. This description will enable assessment of impact on local distance measurements like edge placement errors (EPE) analysis and contour measurements. Knowing the distortions with sufficient resolution and stability can also enable corrections for this phenomenon. We will show that applying this correction in post processing, we can bring back the absolute measurement error from 1.5 nm to 0.3 nm.

Conference Presentation

Citation Download Citation

Harm Dillen, Ton Kiers, Sandip Halder, Thomas I. Wallow, and Frieda van Roey "CD-SEM distortion quantification for EPE metrology and contour analysis", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014515 (28 March 2017); https://doi.org/10.1117/12.2260664

ACCESS THE FULL ARTICLE