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28 March 2017 High-precision CD measurement using energy-filtering SEM techniques
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Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect- ratio (HAR) structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved by using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images.
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Daisuke Bizen, Makoto Sakakibara, Makoto Suzuki, Yoshinori Momonoi, and Hajime Kawano "High-precision CD measurement using energy-filtering SEM techniques", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451K (28 March 2017);

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