Paper
28 March 2017 Scanning electron microscope automatic defect classification of process induced defects
Scott Wolfe, Steve McGarvey
Author Affiliations +
Abstract
With the integration of high speed Scanning Electron Microscope (SEM) based Automated Defect Redetection (ADR) in both high volume semiconductor manufacturing and Research and Development (R and D), the need for reliable SEM Automated Defect Classification (ADC) has grown tremendously in the past few years. In many high volume manufacturing facilities and R and D operations, defect inspection is performed on EBeam (EB), Bright Field (BF) or Dark Field (DF) defect inspection equipment. A comma separated value (CSV) file is created by both the patterned and non-patterned defect inspection tools. The defect inspection result file contains a list of the inspection anomalies detected during the inspection tools’ examination of each structure, or the examination of an entire wafers surface for non-patterned applications. This file is imported into the Defect Review Scanning Electron Microscope (DRSEM). Following the defect inspection result file import, the DRSEM automatically moves the wafer to each defect coordinate and performs ADR. During ADR the DRSEM operates in a reference mode, capturing a SEM image at the exact position of the anomalies coordinates and capturing a SEM image of a reference location in the center of the wafer. A Defect reference image is created based on the Reference image minus the Defect image. The exact coordinates of the defect is calculated based on the calculated defect position and the anomalies stage coordinate calculated when the high magnification SEM defect image is captured. The captured SEM image is processed through either DRSEM ADC binning, exporting to a Yield Analysis System (YAS), or a combination of both. Process Engineers, Yield Analysis Engineers or Failure Analysis Engineers will manually review the captured images to insure that either the YAS defect binning is accurately classifying the defects or that the DRSEM defect binning is accurately classifying the defects. This paper is an exploration of the feasibility of the utilization of a Hitachi RS4000 Defect Review SEM to perform Automatic Defect Classification with the objective of the total automated classification accuracy being greater than human based defect classification binning when the defects do not require multiple process step knowledge for accurate classification. The implementation of DRSEM ADC has the potential to improve the response time between defect detection and defect classification. Faster defect classification will allow for rapid response to yield anomalies that will ultimately reduce the wafer and/or the die yield.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Scott Wolfe and Steve McGarvey "Scanning electron microscope automatic defect classification of process induced defects", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014523 (28 March 2017); https://doi.org/10.1117/12.2258122
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scanning electron microscopy

Inspection

Semiconducting wafers

Defect inspection

Oxides

Silicon

Electron microscopes

Back to Top