Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist

Frederic Lazzarino; Sara Paolillo; Anthony Peter; David De Roest; TaeGeun Seong; Yizhi Wu; Stefan Decoster; Vito Rutigliani; Gian Francesco Lorusso; Vassilios Constantoudis; Sven Van Elshocht; Daniele Piumi; Kathy Barla

doi:10.1117/12.2258040

27 March 2017 Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist

Frederic Lazzarino, Sara Paolillo, Anthony Peter, David De Roest, TaeGeun Seong, Yizhi Wu, Stefan Decoster, Vito Rutigliani, Gian Francesco Lorusso, Vassilios Constantoudis, Sven Van Elshocht, Daniele Piumi, Kathy Barla

Author Affiliations +

Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101460K (2017) https://doi.org/10.1117/12.2258040
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

In this work, we explore the performances of a low-temperature PEALD technology used to trim/clean/smooth and reshape ArF photoresist lines that could subsequently receive an in-situ spacer deposition required to build up any SAxP grating. Different gas mixtures (O2, N2, H2, Ar and combinations) are evaluated on both blanket and patterned wafers. Trim rate, line profile, surface roughness and chemical modification are characterized using ellipsometry, Fourier transform infrared spectroscopy and atomic force microscopy. The photoresist line roughness is measured from top down SEM imaging and the different contributors to the roughness determined from a Power Spectral Density (PSD) analysis. Few results obtained on EUV photoresist blanket wafers using similar plasma treatments will also be briefly presented.

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Frederic Lazzarino, Sara Paolillo, Anthony Peter, David De Roest, TaeGeun Seong, Yizhi Wu, Stefan Decoster, Vito Rutigliani, Gian Francesco Lorusso, Vassilios Constantoudis, Sven Van Elshocht, Daniele Piumi, and Kathy Barla "Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460K (27 March 2017); https://doi.org/10.1117/12.2258040

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