Study for new hardmask process scheme

Daeyoup Lee; Phillip Tatti; Richard Lee; Jack Chang; Winston Cho; Sanggil Bae

doi:10.1117/12.2258099

27 March 2017 Study for new hardmask process scheme

Daeyoup Lee, Phillip Tatti, Richard Lee, Jack Chang, Winston Cho, Sanggil Bae

Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101461L (2017) https://doi.org/10.1117/12.2258099
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Hardmask processes are a key technique to enable low-k semiconductors, but they can have an impact on patterning control, influencing defectivity, alignment, and overlay. Specifically, amorphous carbon layer (ACL) hardmask schemes can negatively affect overlay by creating distorted alignment signals. A new scheme needs to be developed that can be inserted where amorphous carbon is used but provide better alignment performance. Typical spin-on carbon (SOC) materials used in other hardmask schemes have issues with DCD-FCD skew. In this paper we will evaluate new spin-on carbon material with a higher carbon content that could be a candidate to replace amorphous carbon.

Citation Download Citation

Daeyoup Lee, Phillip Tatti, Richard Lee, Jack Chang, Winston Cho, and Sanggil Bae "Study for new hardmask process scheme", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461L (27 March 2017); https://doi.org/10.1117/12.2258099

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