Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration

Lucia D'Urzo; Hareen Bayana; Jelle Vandereyken; Philippe Foubert; Aiwen Wu; Jad Jaber; James Hamzik

doi:10.1117/12.2258582

27 March 2017 Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration

Lucia D'Urzo, Hareen Bayana, Jelle Vandereyken, Philippe Foubert, Aiwen Wu, Jad Jaber, James Hamzik

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Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101462A (2017) https://doi.org/10.1117/12.2258582
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Specific “killer-defects”, such as micro-line-bridges are one of the key challenges in photolithography’s advanced applications, such as multi-pattern. These defects generate from several sources and are very difficult to eliminate. Pointof-use filtration (POU) plays a crucial role on the mitigation, or elimination, of such defects. Previous studies have demonstrated how the contribution of POU filtration could not be studied independently from photoresists design and track hardware settings. Specifically, we investigated how an effective combination of optimized photoresist, filtration rate, filtration pressure, membrane and device cleaning, and single and multilayer filter membranes at optimized pore size could modulate the occurrence of such defects ^{[1, 2, 3 and 4]}. However, the ultimate desired behavior for POU filtration is the selective retention of defect precursor molecules contained in commercially available photoresist. This optimal behavior can be achieved via customized membrane functionalization. Membrane functionalization provides additional non-sieving interactions which combined with efficient size exclusion can selectively capture certain defect precursors. The goal of this study is to provide a comprehensive assessment of membrane functionalization applied on an asymmetric ultra-high molecular weight polyethylene (UPE) membrane at different pore size. Defectivity transferred in a 45 nm line 55 nm space (45L/55S) pattern, created through 193 nm immersion (193i) lithography with a positive tone chemically amplified resist (PT-CAR), has been evaluated on organic under-layer coated wafers. Lithography performance, such as critical dimensions (CD), line width roughness (LWR) and focus energy matrix (FEM) is also assessed.

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Lucia D'Urzo, Hareen Bayana, Jelle Vandereyken, Philippe Foubert, Aiwen Wu, Jad Jaber, and James Hamzik "Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101462A (27 March 2017); https://doi.org/10.1117/12.2258582

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KEYWORDS

Particles

Semiconducting wafers

Line width roughness

Bridges

Fermium

Finite element methods

Frequency modulation

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