Layout independent leveling (LIL) on NXT:1980Di immersion scanners for enhanced productivity

Bram van Hoof; Arjan Holscher; Ralf Gommers; Jeroen Cottaar; Marcel Raas; Samah Khalek; Jan van Kemenade; Maarten Voncken; Roelof de Graaf; Elliot Oti; Stefan Weichselbaum; Richard Droste; ByeongSoo Lee; Chansam Chang; Young Seog Kang; Young Ha Kim; Jeong-Heung Kong; Jong Hoon Jang; YoungSun Nam; Hyunwoo Hwang

doi:10.1117/12.2259794

24 March 2017 Layout independent leveling (LIL) on NXT:1980Di immersion scanners for enhanced productivity

Bram van Hoof, Arjan Holscher, Ralf Gommers, Jeroen Cottaar, Marcel Raas, Samah Khalek, Jan van Kemenade, Maarten Voncken, Roelof de Graaf, Elliot Oti, Stefan Weichselbaum, Richard Droste, ByeongSoo Lee, Chansam Chang, Young Seog Kang, Young Ha Kim, Jeong-Heung Kong, Jong Hoon Jang, YoungSun Nam, Hyunwoo Hwang

Author Affiliations +

Proceedings Volume 10147, Optical Microlithography XXX; 101471A (2017) https://doi.org/10.1117/12.2259794
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

ASML’s 300mm scanner-systems are built on the TWINSCAN (XT/NXT) platform and yield high productivity levels for dry as well as immersion litho-scanners. NXT:1980Di immersion scanners yield productivity levels as high as 275wph while maintaining the overlay accuracy. The NXT:1980Di can be equipped with a new leveling mode that results in a significant reduction of the time that is spent on measuring the wafer focus height map. In the new leveling mode the focus height map is measured employing the full width of the level sensor and thereby minimizing the number of leveling scans. In this paper we describe the implementation of the LIL-method in the TWINSCAN platform design. Here, we report on the focus / leveling performance for both test as well as customer product wafers, and present a productivity outlook on the performance gain for a selected set of exposure use-cases.

Conference Presentation

Citation Download Citation

Bram van Hoof, Arjan Holscher, Ralf Gommers, Jeroen Cottaar, Marcel Raas, Samah Khalek, Jan van Kemenade, Maarten Voncken, Roelof de Graaf, Elliot Oti, Stefan Weichselbaum, Richard Droste, ByeongSoo Lee, Chansam Chang, Young Seog Kang, Young Ha Kim, Jeong-Heung Kong, Jong Hoon Jang, YoungSun Nam, and Hyunwoo Hwang "Layout independent leveling (LIL) on NXT:1980Di immersion scanners for enhanced productivity", Proc. SPIE 10147, Optical Microlithography XXX, 101471A (24 March 2017); https://doi.org/10.1117/12.2259794

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available