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30 March 2017 Design space analysis of novel interconnect constructs for 22nm FDX technology
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In this paper, we describe an integrated design space analysis approach consisting of full factorial layout generation, lithography simulations with added proximity effects, and rigorous statistical analysis through monte-carlo simulations which is used in the evaluating interconnects. This agile Design rule development process provides a quick turnaround time to down-select the potential layout configurations that can offer a competitive, robust and reliable design and manufacturing. Further layout and placement optimization is carried out to evaluate intra-cell, inter-cell and cell boundary situations, which are critical for a place and routed block. These interconnects developed using the integrated approach has been the key contributor to give 20-30% higher performance at the same Iddq leakage for 8T libraries compared to Single Diffusion break or Double Diffusion break based 12T libraries in 22FDX Technology.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tuhin Guha Neogi, Navneet Jain, Piyush Verma, David Permana, Andrey Lutich, Francois Weishbuch, Deepal Wehella-Gamage, Benoit Francois Claude Ramadout, Gowtham Vangara, Juhan Kim, Thomas Herrmann, Kai Sun, Katherina Babich, David Pritchard, and Mahbub Rashed "Design space analysis of novel interconnect constructs for 22nm FDX technology", Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 101480Z (30 March 2017);

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