Overcoming etch challenges related to EUV based patterning (Conference Presentation)

Andrew W. Metz; Hongyun Cottle; Masanobu Honda; Shinya Morikita; Kaushik A. Kumar; Peter Biolsi

doi:10.1117/12.2258153

27 April 2017 Overcoming etch challenges related to EUV based patterning (Conference Presentation)

Andrew W. Metz, Hongyun Cottle, Masanobu Honda, Shinya Morikita, Kaushik A. Kumar, Peter Biolsi

Proceedings Volume 10149, Advanced Etch Technology for Nanopatterning VI; 1014906 (2017) https://doi.org/10.1117/12.2258153
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for < 40 nm pitch applications. The confluence of high cost and extreme process control challenges of Self-Aligned Quad Patterning [SAQP] with continued momentum for EUV ecosystem readiness could provide cost advantages in addition to improved intra-level overlay performance relative to multiple patterning approaches. However, Line Edge Roughness [LER] and Line Width Roughness [LWR] performance of EUV defined resist images are still far from meeting technology needs or ITRS spec performance. Furthermore, extreme resist height scaling to mitigate flop over exacerbates the plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TEL^TM Vigus^TM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

Conference Presentation

Citation Download Citation

Andrew W. Metz, Hongyun Cottle, Masanobu Honda, Shinya Morikita, Kaushik A. Kumar, and Peter Biolsi "Overcoming etch challenges related to EUV based patterning (Conference Presentation)", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 1014906 (27 April 2017); https://doi.org/10.1117/12.2258153

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