Plasma processing of III-V materials for energy efficient electronics applications

Iain Thayne; Xu Li; David Millar; Yen-Chun Fu; Uthayasankararan Peralagu

doi:10.1117/12.2257863

21 March 2017 Plasma processing of III-V materials for energy efficient electronics applications

Iain Thayne, Xu Li, David Millar, Yen-Chun Fu, Uthayasankararan Peralagu

Proceedings Volume 10149, Advanced Etch Technology for Nanopatterning VI; 101490R (2017) https://doi.org/10.1117/12.2257863
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ((100) and (110) oriented InGaAs and InGaSb).

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Citation Download Citation

Iain Thayne, Xu Li, David Millar, Yen-Chun Fu, and Uthayasankararan Peralagu "Plasma processing of III-V materials for energy efficient electronics applications", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490R (21 March 2017); https://doi.org/10.1117/12.2257863

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